Archive for July, 2009
Friday, July 31st, 2009
Nanoprint equipment and method of making fine structure
A pillar with a high aspect ratio is transferred by a nanoprinting method. In order to form a fine structure on a substrate, a nanoprinting apparatus heats and presses the substrate and a mold with a fine concave-convex pattern formed thereon, the mold ...
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Friday, July 31st, 2009
Method for producing metal nanofibers, yarns and textiles
A method for fabrication of nanometer scale metal fibers, followed by optional further processing into cables, yarns and textiles composed of the primary nanofibers. A multicomponent composite is first formed by drilling a billet of matrix metal, and inserting rods of the metal ...
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Friday, July 31st, 2009
Methods for producing coated nanoparticles from microparticles
A method for producing composite, shelled, alloy and compound nanoparticles as well as nanostructured films of composite, shelled, alloy and compound nanoparticles by using laser ablation of microparticles is disclosed.
Generator for flux specific bursts of nano-particles
Methods, systems and apparatus for producing a variable, ...
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Friday, July 31st, 2009
Methods of forming through-substrate interconnects
In one embodiment of a method of forming at least one through-substrate interconnect, a semiconductor substrate having first surface and an opposing second surface is provided. At least one opening is formed in the semiconductor substrate to extend from the first surface to an intermediate depth ...
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Friday, July 31st, 2009
Formation of nanowhiskers on a substrate of dissimilar material
A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is essentially atomically ...
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Friday, July 31st, 2009
Methods of forming through-substrate interconnects
In one embodiment of a method of forming at least one through-substrate interconnect, a semiconductor substrate having first surface and an opposing second surface is provided. At least one opening is formed in the semiconductor substrate to extend from the first surface to an intermediate depth ...
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Friday, July 31st, 2009
Methods for creating a densified group IV semiconductor nanoparticle thin film
A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and ...
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Friday, July 31st, 2009
NANO-electronics
Systems and methods are disclosed to fabricate an electronic device on a substrate by genetically engineering first, second, third, and fourth viruses each having a plurality of selective binding sites; forming first, second, third, and fourth viral biotemplates by immersing the first, second, third, and fourth viruses in one or ...
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Friday, July 31st, 2009
Counter current mixing reactor
A mixing reactor for mixing efficiently streams of fluids of differing densities. In a preferred embodiment, one of the fluids is supercritical water, and the other is an aqueous salt solution. Thus, the reactor enables the production of metal oxide nanoparticles as a continuous process, without any ...
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Friday, July 31st, 2009
Synthesis of nano-materials in ionic liquids
A method of synthesizing nanoparticles includes: combining at least one stabilizing agent, at least one precursor and an ionic liquid to form a reaction mixture; heating the reaction mixture to a predetermined temperature to form the nanoparticles and cause the nanoparticles to self-separate from the ...
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Methods of interfacing nanomaterials for the monitoring and execution of pharmaceutical manufacturing processes
Methods of interfacing nanomaterials used to monitor and execute the pharmaceutical manufacturing process are disclosed herein. The nanomaterials are useful to provide a plurality of analysis to the manufacturing process. Consequently, the methods provide a means to perform validation and quality manufacturing on an integrated level whereby pharmaceutical manufacturers can achieve data and product integrity and ultimately minimize cost.
Functional molecular device
A functional molecular device displaying its functions under the action of an electrical field is provided. A Louis base molecule, exhibiting positive dielectric constant anisotropy or exhibiting dipole moment along the long-axis direction of the Louis base molecule, is arrayed in the form of a pendant on an electrically conductive linear or film-shaped principal-axis molecule of a conjugated system, via a metal ion capable of acting as a Louis acid. The resulting structure is changed in conformation on application of an electrical field to exhibit its function. The electrically conductive linear or film-shaped principal-axis molecule and the Louis base molecule form a complex with the metal ion. On application of the electrical field, the Louis base molecule performs a swinging movement or a seesaw movement to switch the electrical conductivity of the principal-axis molecule. This molecule exhibits electrical characteristics which may be reversed depending on whether or not the molecule has been subjected to electrical field processing. A molecular device having a function equivalent to one of CMOS may be produced from one and the same material.
Superlattice nano-device and method for making same
A nanodevice ( 1 ) for a desired function includes a substrate ( 11 ), a one-dimensional nanostructure ( 12 ), a functional layer ( 20 ) having a desired function, a conductive thin film electrode ( 30 ), and an insulating layer ( 40 ). The one-dimensional nanostructure is operatively extends from the substrate. The functional layer surrounds at least a portion of the one-dimensional nanostructure. The conducting thin film electrode surrounds/encompasses the functional layer. The insulating layer is positioned between the substrate and the conductive thin film electrode, thereby electrically insulating the one from the other. Further, the nanodevice can incorporate one or more functional units 50 , each unit including a one-dimensional nanostructure and a respective functional layer. The units may or may not share the same conductive thin film electrode and/or insulating layer.
Superlattice nano-device and method for making same
A nanodevice ( 1 ) for a desired function includes a substrate ( 11 ), a one-dimensional nanostructure ( 12 ), a functional layer ( 20 ) having a desired function, a conductive thin film electrode ( 30 ), and an insulating layer ( 40 ). The one-dimensional nanostructure is operatively extends from the substrate. The functional layer surrounds at least a portion of the one-dimensional nanostructure. The conducting thin film electrode surrounds/encompasses the functional layer. The insulating layer is positioned between the substrate and the conductive thin film electrode, thereby electrically insulating the one from the other. Further, the nanodevice can incorporate one or more functional units 50 , each unit including a one-dimensional nanostructure and a respective functional layer. The units may or may not share the same conductive thin film electrode and/or insulating layer.
Optical semiconductor device and method of manufacturing the same
Provided is an optical semiconductor device, which includes a GaAs substrate (or a semiconductor substrate) 20 ; an n-type contact layer (or a doping layer) 21 formed on one surface 20 a of the GaAs substrate 20 ; an active layer 25 formed on top of the n-type contact layer 21 and including at least one quantum dot 23 ; a p-type contact layer (or a contact layer) 26 formed on top of the active layer 25 and being of an opposite conduction type to the n-type contact layer 21 ; an insulating layer 29 formed on top of the p-type contact layer 26 and including a first opening 29 a whose size is such that a contact region CR of the p-type contact layer 26 lies within the first opening 29 a ; a p-side electrode layer 33 c formed on top of the contact region CR of the p-type contact layer 26 and on top of the insulating layer 29 and including a second opening 33 a lying within the first opening 29 a ; and a n-side electrode layer (or a second electrode layer) 37 formed on the other surface 20 b of the GaAs substrate 20.
