Archive for February, 2010
Tuesday, February 23rd, 2010
High-power inductively coupled plasma technology is used for thermal cracking and vaporization of continuously fed carbonaceous materials into elemental carbon, for reaction with separate and continuously fed metal catalysts inside a gas-phase high-temperature reactor system operating at or slightly below atmospheric pressures. In one particularly preferred embodiment, in-flight growth of ...
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Tuesday, February 23rd, 2010
Certain applicator liquids and method of making the applicator liquids are described. The applicator liquids can be used to form nanotube films or fabrics of controlled properties. An applicator liquid for preparation of a nanotube film or fabric includes a controlled concentration of nanotubes dispersed in a liquid medium containing ...
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Tuesday, February 23rd, 2010
Methods of forming a microelectronic structure are described. Embodiments of those methods include providing a substrate comprising at least one opening, and then applying a nanotube slurry comprising at least one nanotube to the substrate, wherein the at least one nanotube is substantially placed within the at least one opening.
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Tuesday, February 23rd, 2010
A metallic nanoparticle coated microporous substrate, the process for preparing the same and uses thereof are described.
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Tuesday, February 23rd, 2010
The present invention is directed to structures and methods of fabricating electromechanical memory cells having nanotube crossbar elements. Such memory cells include a substrate having transistor with a contact that electrically contacts with the transistor. A first support layer is formed over the substrate with an opening that defines a ...
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Tuesday, February 23rd, 2010
A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal is, axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a ...
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Tuesday, February 23rd, 2010
This invention provides a substrate structure capable of controlling the threshold voltage of a MOS transistor independently of the substrate concentration and easily suppressing a short channel effect caused by reducing the channel length. A first nanosilicon film formed from nanosilicon grains having the same grain size is formed on ...
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Tuesday, February 23rd, 2010
The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality ...
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Tuesday, February 23rd, 2010
The present invention provides amphiphilic diacetylene compounds, and compositions and self-assembled nanotubes containing the same. Also provided are methods of producing the compounds, compositions, and nanotubes of the invention, and methods of destroying or inhibiting the growth or proliferation of microorganisms using the nanotubes of the present invention.
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Tuesday, February 23rd, 2010
A memory cell is provided including a tunnel dielectric layer overlying a semiconductor substrate. The memory cell also includes a floating gate having a first portion overlying the tunnel dielectric layer and a second portion in the form of a nanorod extending from the first portion. In addition, a control ...
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Methods of interfacing nanomaterials for the monitoring and execution of pharmaceutical manufacturing processes
Methods of interfacing nanomaterials used to monitor and execute the pharmaceutical manufacturing process are disclosed herein. The nanomaterials are useful to provide a plurality of analysis to the manufacturing process. Consequently, the methods provide a means to perform validation and quality manufacturing on an integrated level whereby pharmaceutical manufacturers can achieve data and product integrity and ultimately minimize cost.
Functional molecular device
A functional molecular device displaying its functions under the action of an electrical field is provided. A Louis base molecule, exhibiting positive dielectric constant anisotropy or exhibiting dipole moment along the long-axis direction of the Louis base molecule, is arrayed in the form of a pendant on an electrically conductive linear or film-shaped principal-axis molecule of a conjugated system, via a metal ion capable of acting as a Louis acid. The resulting structure is changed in conformation on application of an electrical field to exhibit its function. The electrically conductive linear or film-shaped principal-axis molecule and the Louis base molecule form a complex with the metal ion. On application of the electrical field, the Louis base molecule performs a swinging movement or a seesaw movement to switch the electrical conductivity of the principal-axis molecule. This molecule exhibits electrical characteristics which may be reversed depending on whether or not the molecule has been subjected to electrical field processing. A molecular device having a function equivalent to one of CMOS may be produced from one and the same material.
Superlattice nano-device and method for making same
A nanodevice ( 1 ) for a desired function includes a substrate ( 11 ), a one-dimensional nanostructure ( 12 ), a functional layer ( 20 ) having a desired function, a conductive thin film electrode ( 30 ), and an insulating layer ( 40 ). The one-dimensional nanostructure is operatively extends from the substrate. The functional layer surrounds at least a portion of the one-dimensional nanostructure. The conducting thin film electrode surrounds/encompasses the functional layer. The insulating layer is positioned between the substrate and the conductive thin film electrode, thereby electrically insulating the one from the other. Further, the nanodevice can incorporate one or more functional units 50 , each unit including a one-dimensional nanostructure and a respective functional layer. The units may or may not share the same conductive thin film electrode and/or insulating layer.
Superlattice nano-device and method for making same
A nanodevice ( 1 ) for a desired function includes a substrate ( 11 ), a one-dimensional nanostructure ( 12 ), a functional layer ( 20 ) having a desired function, a conductive thin film electrode ( 30 ), and an insulating layer ( 40 ). The one-dimensional nanostructure is operatively extends from the substrate. The functional layer surrounds at least a portion of the one-dimensional nanostructure. The conducting thin film electrode surrounds/encompasses the functional layer. The insulating layer is positioned between the substrate and the conductive thin film electrode, thereby electrically insulating the one from the other. Further, the nanodevice can incorporate one or more functional units 50 , each unit including a one-dimensional nanostructure and a respective functional layer. The units may or may not share the same conductive thin film electrode and/or insulating layer.
Optical semiconductor device and method of manufacturing the same
Provided is an optical semiconductor device, which includes a GaAs substrate (or a semiconductor substrate) 20 ; an n-type contact layer (or a doping layer) 21 formed on one surface 20 a of the GaAs substrate 20 ; an active layer 25 formed on top of the n-type contact layer 21 and including at least one quantum dot 23 ; a p-type contact layer (or a contact layer) 26 formed on top of the active layer 25 and being of an opposite conduction type to the n-type contact layer 21 ; an insulating layer 29 formed on top of the p-type contact layer 26 and including a first opening 29 a whose size is such that a contact region CR of the p-type contact layer 26 lies within the first opening 29 a ; a p-side electrode layer 33 c formed on top of the contact region CR of the p-type contact layer 26 and on top of the insulating layer 29 and including a second opening 33 a lying within the first opening 29 a ; and a n-side electrode layer (or a second electrode layer) 37 formed on the other surface 20 b of the GaAs substrate 20.
