Methods of interfacing nanomaterials used to monitor and execute the pharmaceutical manufacturing process are disclosed herein. The nanomaterials are useful to provide a plurality of analysis to the manufacturing process. Consequently, the methods provide a means to perform validation and quality manufacturing on an integrated level whereby pharmaceutical manufacturers can achieve data and product integrity and ultimately minimize cost.
A functional molecular device displaying its functions under the action of an electrical field is provided. A Louis base molecule, exhibiting positive dielectric constant anisotropy or exhibiting dipole moment along the long-axis direction of the Louis base molecule, is arrayed in the form of a pendant on an electrically conductive linear or film-shaped principal-axis molecule of a conjugated system, via a metal ion capable of acting as a Louis acid. The resulting structure is changed in conformation on application of an electrical field to exhibit its function. The electrically conductive linear or film-shaped principal-axis molecule and the Louis base molecule form a complex with the metal ion. On application of the electrical field, the Louis base molecule performs a swinging movement or a seesaw movement to switch the electrical conductivity of the principal-axis molecule. This molecule exhibits electrical characteristics which may be reversed depending on whether or not the molecule has been subjected to electrical field processing. A molecular device having a function equivalent to one of CMOS may be produced from one and the same material.
A nanodevice ( 1 ) for a desired function includes a substrate ( 11 ), a one-dimensional nanostructure ( 12 ), a functional layer ( 20 ) having a desired function, a conductive thin film electrode ( 30 ), and an insulating layer ( 40 ). The one-dimensional nanostructure is operatively extends from the substrate. The functional layer surrounds at least a portion of the one-dimensional nanostructure. The conducting thin film electrode surrounds/encompasses the functional layer. The insulating layer is positioned between the substrate and the conductive thin film electrode, thereby electrically insulating the one from the other. Further, the nanodevice can incorporate one or more functional units 50 , each unit including a one-dimensional nanostructure and a respective functional layer. The units may or may not share the same conductive thin film electrode and/or insulating layer.
A nanodevice ( 1 ) for a desired function includes a substrate ( 11 ), a one-dimensional nanostructure ( 12 ), a functional layer ( 20 ) having a desired function, a conductive thin film electrode ( 30 ), and an insulating layer ( 40 ). The one-dimensional nanostructure is operatively extends from the substrate. The functional layer surrounds at least a portion of the one-dimensional nanostructure. The conducting thin film electrode surrounds/encompasses the functional layer. The insulating layer is positioned between the substrate and the conductive thin film electrode, thereby electrically insulating the one from the other. Further, the nanodevice can incorporate one or more functional units 50 , each unit including a one-dimensional nanostructure and a respective functional layer. The units may or may not share the same conductive thin film electrode and/or insulating layer.
Provided is an optical semiconductor device, which includes a GaAs substrate (or a semiconductor substrate) 20 ; an n-type contact layer (or a doping layer) 21 formed on one surface 20 a of the GaAs substrate 20 ; an active layer 25 formed on top of the n-type contact layer 21 and including at least one quantum dot 23 ; a p-type contact layer (or a contact layer) 26 formed on top of the active layer 25 and being of an opposite conduction type to the n-type contact layer 21 ; an insulating layer 29 formed on top of the p-type contact layer 26 and including a first opening 29 a whose size is such that a contact region CR of the p-type contact layer 26 lies within the first opening 29 a ; a p-side electrode layer 33 c formed on top of the contact region CR of the p-type contact layer 26 and on top of the insulating layer 29 and including a second opening 33 a lying within the first opening 29 a ; and a n-side electrode layer (or a second electrode layer) 37 formed on the other surface 20 b of the GaAs substrate 20.
